AN UNBIASED VIEW OF N TYPE GE

An Unbiased View of N type Ge

s is the fact that of your substrate materials. The lattice mismatch causes a substantial buildup of pressure Vitality in Ge levels epitaxially grown on Si. This strain energy is mostly relieved by two mechanisms: (i) generation of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of both the substrate as we

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